Low Noise Multiquantum Well DAR IMPATT Diodes Based On SiXGe1-X/Si

  • Suranjana Banerjee
Keywords: Multiquantum Well; DAR IMPATT; W-band; Mole fraction of Ge, negative conductance

Abstract

A Multiquantum Well (MQW) SixGe1-x/Si DAR (Double Avalanche Region) IMPATT (Impact Avalanche Transit Time) diode as a high power-high efficiency-low noise source at W-band is proposed in this paper. The RF power, conversion efficiency and noise of the device are optimized with respect to number of quantum wells and Ge mole fraction. The proposed device delivers peak power of 2.7 W, conversion efficiency of 7.5% and noise measure of 25 dB when the number of wells in the MQW structure is four and mole fraction of Ge is 0.3. The admittance plots of the device exhibit distinct negative conductance bands for three different (0.1, 0.2 and 0.3) mole fractions of Ge. An upward shift of optimum frequency is observed with increasing Ge mole fraction. The noise measure of the device decreases with increasing mole fraction of Ge and decreasing current.

Downloads

Download data is not yet available.

References

[1] T.T. Fong and H.J. Kuno, “MM-wave pulsed Impatt sources”, IEEE Trans. Microwave Theory and Tech., Vol. MTT-27, p.492 (1979).

[2] W. Behr and J.F. Luy, “ High-Power operation mode of pulsed Impatt diodes”, IEEE Electron Dev. Lett., Vol. EDL-11, p.206 (1990).

[3] J.P. Banerjee, S.P. Pati and S.K. Roy, “Computer studies on the space charge dependence of avalanche zone width and conversion efficiency of single drift p+nn+ and n+pp+ Indium Phosphide Impatts”, Appl. Phys. A, Vol. 35, p. 125 (1984).

[4] Dutta,D.N., Pati, S.P., Banerjee, J.P., Pal,B.B., Roy, S.P.: “Computer analysis of DC field and current density profiles of DAR Impatt diodes”, IEEE Trans. Electron Devices 29, 632–677 (1982).

[5] M. J. Bailey, “Hetrojunction IMPATT diodes”, IEEE Trans Electron Devices, Vol.39, p.1829 (1992).

[6] J.C. De Jaeger, R. Kozlowski and G. Salmer, “High efficiency GaInAs/InP heterojunction”, IEEE Trans Electron Devices, Vol. 30, Issue 7, p. 790-796 (1983).

[7] N.S Dogan, J,R. East, M. Elta and G.I. Haddad, “Millimeter wave heterojunction MITATT diodes”, IEEE Trans. Microwave Theory and Tech., Vol. MTT 35, p.1304 (1987).

[8] G.N. Dash and S.P. Pati, “Computer aided studies on the microwave characteristics of InP/GaInAs and GaAs/GaInAs heterostructure single drift region impact avalanche transit didoes”, J. Phys. D. Appl. Phys., Vol.27, p.1719 (1994).

[9] [11] S.M. Sze and R.M. Ryder, “Microwave avalanche didoes”, Proc. IEEE (Lett.), vol. 59, p.1140 (1971).
[10] A. Acharyya, S. Banerjee and J. P. Banerjee, “ Large signal simulation of 94 GHz pulsed DDR Silicon IMPATTs including the temperature transient effect”, Radioengineering [Czech and Slovak], Vol. 21, no. 4, pp. 1218-1225 (2012).

[11] J. Douglas, and Y. Yuan, “Finite difference methods for the transient behavior of a semiconductor device,” IMA Preprint Series#286, Institute for Mathematics and Its Applications, University of Minnesota, Minnesota (1987).

[12] H. K. Gummel, and J. L. Blue, “A small-signal theory of avalanche noise in IMPATT diodes,” IEEE Trans. on Electron Devices, vol. 14, pp. 569-580 (1967).

[13] Suranjana Banerjee, Aritra Acharyya and J. P. Banerjee, “Noise Performance of Heterojunction DDR MITATT Devices Based on Si~Si1-xGex at W-Band,” Active and Passive Electronic Components [USA], vol. 2013, pp. 1-7 (2013).
Published
2020-08-29
How to Cite
Banerjee, S. (2020). Low Noise Multiquantum Well DAR IMPATT Diodes Based On SiXGe1-X/Si. Asian Journal For Convergence In Technology (AJCT), 6(2), 29-35. https://doi.org/10.33130/AJCT.2020v06i02.006