I-V Characteristics of Cadmium Telluride Quantum Dots Diode Fabricated by Drop Casting Method

  • Meera R Gumaste
  • Gururaj A Kulkarni

Abstract

Current (I)-Voltage (V) characterizations of a CdTe quantum dot diode is discussed in this article. The quantum dot diode is fabricated by a simple drop casting method on an n-type Indium Tin Oxide glass substrate. The linear variation of current with respect to applied voltage can be attributed to reduced grain boundary defects and enriched crystallinity. It is also observed that quantum dots can show good current conduction than CdTe nano-rods.

Keywords: CdTe Quantum dot diode, ITO, I-V characteristics, grain boundary defects

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Gumaste, M. R., & Kulkarni, G. A. (2021). I-V Characteristics of Cadmium Telluride Quantum Dots Diode Fabricated by Drop Casting Method. Asian Journal For Convergence In Technology (AJCT), 7(1), 20-21. https://doi.org/10.33130/AJCT.2021v07i01.005