I-V Characteristics of Cadmium Telluride Quantum Dots Diode Fabricated by Drop Casting Method

  • Meera R Gumaste
  • Gururaj A Kulkarni
Keywords: CdTe Quantum dot diode, ITO, I-V characteristics, grain boundary defects


Current (I)-Voltage (V) characterizations of a CdTe quantum dot diode is discussed in this article. The quantum dot diode is fabricated by a simple drop casting method on an n-type Indium Tin Oxide glass substrate. The linear variation of current with respect to applied voltage can be attributed to reduced grain boundary defects and enriched crystallinity. It is also observed that quantum dots can show good current conduction than CdTe nano-rods.


[1]. Ling Chen et.al, Sci. Adv. Mater. 2012, Vol. 4, No. 2, doi:10.1166/sam.2012.1288
[2]. Hokyeong Shin et.al, Bull. Korean Chem. Soc. 2014, Vol. 35, No. 10 2895 http://dx.doi.org/10.5012/bkcs.2014.35.10.2895
[3]. Sandeep Kumar et.al, CHEM. COMMUN. , 2003, 2478–2479
[4]. Anjali Thakur et.al, IOSR Journal of Engineering, ISSN (e): 2250-3021, ISSN (p): 2278-8719 Vol. 08, Issue 6 (June. 2018), ||V (VII) || PP 16-22
[5]. Guo-Yu Lan et.al, J. Mater. Chem., 2009, 19, 2349–2355 | 2349
[6]. Shi Sun et.al, J. Mater. Chem., 2012, 22, 19207
[7]. Nur Efsan Koksal et.al, Physica B 600 (2021) 412599, https://doi.org/10.1016/j.physb.2020.412599
[8]. Sai Guduru et.al, 37th IEEE Photovoltaic Specialists Conference, Seattle, WA, 2011, pp. 002709-002714.
[9]. Zusing Yang et.al, Solar Energy Materials & Solar Cells 94 (2010) 2046–2051, doi:10.1016/j.solmat.2010.06.013
[10]. Meera Ramachandra Gumaste et.al, https://doi.org/10.1016/j.matpr.2020.08.005
[11]. B. Jai Kumar etal, Journal ofLuminescence178(2016)362–367, http://dx.doi.org/10.1016/j.jlumin.2016.06.012
[12]. Jayakrishna Khatei and K.S.R Koteswara Rao, AIP Advances 1, 042166 (2011) http://doi.org/10.1063/1.3669408
[13]. Subhash Chander et.al, Physica E 89 (2017) 29–32, http://dx.doi.org/10.1016/j.physe.2017.02.002
[14]. Subhash Chander et.al, Thin Solid Films 625 (2017) 131–137, http://dx.doi.org/10.1016/j.tsf.2017.01.052
[15]. Meera Ramachandra Gumaste et al 2019 IOP Conf. Ser.: Mater. Sci. Eng. 577 012169
How to Cite
Gumaste, M. R., & Kulkarni, G. A. (2021). I-V Characteristics of Cadmium Telluride Quantum Dots Diode Fabricated by Drop Casting Method. Asian Journal For Convergence In Technology (AJCT) ISSN -2350-1146, 7(1), 20-21. https://doi.org/10.33130/AJCT.2021v07i01.005

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